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InGaAs-PIN/Preamp Receiver
FEATURES
* Small Form Factor Package(GW): 9 pins coplanar * Integrated Design Optimizes Performance at Bit Rates up to 12.5Gb/s * High Sensitivity: -19dBm (typ.) * Electrical Differential Output * Wide Bandwidth: 11GHz (typ.)
FRM5J141GW
APPLICATIONS
This PIN with HBT preamplifier is intended to function as an optical receiver at 1,310nm or 1,530-1,620nm in SONET, SDH, DWDM or other optical fiber systems operating up to 12.5Gb/s. The typical transimpedance (Zt) value of 1,300 optimizes the total bandwidth for 10Gb/s application. The detector preamplifier is DC coupled and has an electrical differential output.
DESCRIPTION
The FRM5J141GW incorporates a high bandwidth InGaAs PIN photo diode, a GaAs HBT IC amplifier in a hermetically sealed Small Form Factor package (SFF). The PIN is processed with modern MOVPE techniques resulting in a reliable performance over a wide range of operating conditions. The lens coupling system and the single mode fiber are assembled using Nd YAG welding.
ABSOLUTE MAXIMUM RATINGS (Tc=25C)
Parameter Storage Temperature Operating Temperature Supply Voltage PIN Reverse Voltage PIN Reverse Current Symbol Tstg Top Vss VR IR(peak) Ratings -40 to +85 -5 to +75 -6 to 0 0 to 20 4 Unit C C V V mA
Edition 1.3 January 2003
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FRM5J141GW
InGaAs-PIN/Preamp Receiver
OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25C, =1,550nm, Vss=-5.2V, VR=5V, unless otherwise specified)
Parameter PIN Responsivity AC Transimpedance Output Common Voltage Maximum Output Voltage Swing Bandwidth Lower Cut-off Frequency Peaking Symbol R13 R15 R16 Zt Vout Vclip BW -3dB from 750MHz, Pin=-16dBm fcl dpk 130MHz to BW, Pin=-16dBm 1GHz to 6GHz, Pin=-16dBm Group Delay Deviation GD 1GHz to 8GHz, Pin=-16dBm Output Return Loss S22 130MHz to 6GHz 130MHz to 8GHz 25C, Rext=13dB 10Gb/s, NRZ, 25C, Rext=8.2dB 31-1, PRBS=2 25C, Rext=6.0dB -12 B.E.R.=10 70C, Rext=13dB 10Gb/s, NRZ, Rext=13dB PRBS=231-1, Rext=8.2dB B.E.R.=10-12 Rext=6.0dB = 1,550nm = 1,310nm Iss Vss VR -0.5 27 27 -5.46 4.75 30 12 10 -19.0 -17.0 -14.0 -18.0 0 1 2 110 -5.20 5.0 60 -18.0 -17.0 130 -4.94 12 dB 40 0.5 15 100 1.5 40 psp-p kHz dB Test Conditions = 1,310nm = 1,550nm = 1,620nm f = 750MHz, Single-end Saturated Output Voltage Min. 0.85 0.85 900 400 9.0 Limits Typ. 0.95 1.00 0.85 1300 -400 600 11.0 Max. 800 Unit A/W mV mV GHz
Minimum Sensitivity
Pr
dBm
Maximum Overload
Po ORL
dBm
Optical Return Loss Preamp Supply Current Preamp Supply Voltage PIN Supply Voltage
dB mA V V
Note: All the parameters are measured with 50 DC-coupled and 0V output offset.
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InGaAs-PIN/Preamp Receiver
Notes
FRM5J141GW
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FRM5J141GW
"GW" PACKAGE
8 - P0.8=6.4 2 - 0.2 7 - 0.4
InGaAs-PIN/Preamp Receiver
UNIT: mm
Lead Detail (x10) Bending Radius 0.3 0.35 0.25
4.0
2 - R1.1 O4.1 O0.9 0.6
(1.0)
1 17.0 13.0 9.0
9 5.5 6.7 0.4 PIN # Symbol
1 VPD VPreamp GND OUT GND OUT GND OFFSET NC
2.0
0.1
Function
PD BIAS (+) Preamp BIAS CASE GROUND OUTPUT (-) CASE GROUND OUTPUT (+) CASE GROUND DC OFFSET CONTROL NC
1400 MIN. 5.0
28.0 MAX.
2 3 4 5 6 7 8 9
2.6
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111
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CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
www.fcsi.fujitsu.com
FUJITSU QUANTUM DEVICES EUROPE LTD.
Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888
* Do not put this product into the mouth. * Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. * Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269
FUJITSU QUANTUM DEVICES LIMITED
Business Development Division 11th Floor, Hachioji Daiichi-Seimei Bldg. 3-20-6 Myojin-cho Hachioji-city, Tokyo 192-0046, Japan TEL: +81-426-43-5885 FAX: +81-426-43-5582
Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others.
(c) 2002 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0302M200
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